Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: K1.00271 : Nanoscale engineering of photoelectron kinetics in quantum dot structures
Author:
We investigate photoelectron kinetics in advanced quantum dot (QD)
structures, which combine quantum tuning of localized and
conducting states
with controllable photoelectron properties. Our unique approach
is based on
engineering of photoelectron capture processes using various
configurations
of manageable potential barriers around single QDs and collective
barriers
around QD planes (lateral structures) and QD clusters (vertical
structures).
Potential barriers around QDs are formed by electrons bounded in
dots and
ionized impurities in the depletion region. These potential barriers
separate the conducting electron states from the localized
intra-dot states.
Besides manageable photoelectron lifetime, the novel structures
will also
provide high scalability, low generation-recombination noise in
sensing
applications and low recombination losses in QD solar cells.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.K1.271
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