Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: K1.00257 : A Way from GHz to THz Graphene Nanosensor
Author:
The unique bandstructure, and associated carrier properties, of
graphene
make this material of ideal interest for application as a broadly
tuneable
sensor, for specific application to the microwave and terahertz
(THz)
regime. The gapless spectrum characteristic of single-layer
graphene, as
well as the small forbidden gap that appears in bilayer graphene,
is ideally
matched to the low (meV) energy of photons near the THz regime,
in marked
contrast to conventional semiconductors whose relevant bandgaps are
typically several orders of magnitude larger.
In this presentation, we describe the results of ongoing research
that is
being undertaken with the objective of developing upto THz
nanosensors based
on graphene. We describe the preparation of graphene devices by
mechanical
exfoliation, after which we discuss the characterization of their
electrical
properties using low-temperature magneto-transport investigations
[1]. These
studies demonstrate the formation of open quantum-dot structures
in small
graphene flakes, contacted by sub-micron scale metal electrodes. The
observation of quantum fluctuations in the magneto-resistance of
these
structures indicates the presence of quantized dot states, whose
characteristics may be of use in THz sensing.
[1] Y. Ujiie et al., J. Phys.: Condens. Matt. 21 (2009) 382202.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.K1.257
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