APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Abstract: J19.00001 : Vortex-Core Reversal Dynamics: Towards Vortex Random Access Memory
11:15 AM–11:51 AM
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An energy-efficient, ultrahigh-density, ultrafast, and nonvolatile
solid-state universal memory is a long-held dream in the field of
information-storage technology. The magnetic random access memory (MRAM)
along with a spin-transfer-torque switching mechanism is a strong
candidate-means of realizing that dream, given its nonvolatility, infinite
endurance, and fast random access. Magnetic vortices in patterned soft
magnetic dots promise ground-breaking applications in information-storage
devices, owing to the very stable twofold ground states of either their
upward or downward core magnetization orientation and plausible core
switching by in-plane alternating magnetic fields or spin-polarized
currents. However, two technologically most important but very challenging
issues --- low-power recording and reliable selection of each memory cell
with already existing cross-point architectures --- have not yet been
resolved for the basic operations in information storage, that is, writing
(recording) and readout. Here, we experimentally demonstrate a magnetic
vortex random access memory (VRAM) in the basic cross-point architecture.
This unique VRAM offers reliable cell selection and low-power-consumption
control of switching of out-of-plane core magnetizations using specially
designed rotating magnetic fields generated by two orthogonal and unipolar
Gaussian-pulse currents along with optimized pulse width and time delay. Our
achievement of a new device based on a new material, that is, a medium
composed of patterned vortex-state disks, together with the new physics on
ultrafast vortex-core switching dynamics, can stimulate further fruitful
research on MRAMs that are based on vortex-state dot arrays.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.J19.1