Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00074 : Poly (2-vinyl naphthalene-b-acrylic acid) (P2VN-b-PAA) block copolymer pattern formation, alignment and pattern transfer by reactive ion etching (RIE)
Author:
P2VN-b-PAA (Mn=30.8-b-24 kDa) lamellar block copolymer was
examined for use
as a pattern transfer template due to the potential large dry
etching
contrast between the blocks. As-spun films have a micelle or
vertically
oriented cylindrical morphology depending on the spinning
solvent. Vapor
annealing with acetone, a poor solvent for P2VN-b-PAA, resulted
rapid
reordering to a vertically oriented lamellar morphology within 5
minutes for
films $<$50 nm thick. Films between 30 to 50 nm thick were spin
coated onto
oxide wafers with interdigitated electrodes to examine if an
electric field
would align the morphology. The lamellae aligned normal to the
electrodes
within 1 hour by electric field assisted acetone vapor annealing
at field
strengths as low as 1V/micron. CF$_{4}$ plasma dry etching
contrast as high
as 1:3.8 (P2VN:PAA) for homopolymer blanket films was measured.
The block
copolymer pattern was transferred to the silicon substrate in two
steps
using CF$_{4}$ followed by SF$_{6}$ RIE.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.74
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