Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00069 : High area density etching mask for data storage industry based on the block copolymer self-assembly
Author:
The application of block copolymer as etching mask for data
storage industry
was investigated. Higher area density silicon oxide pillars from
block
copolymer template were generated on the media substrate over
several inch
square areas. Thin film of PS-b-PVP was spin coated and solvent
annealed to
generate cylindrical micro-domain normal to surface. The film was
then
reconstructed in the ethanol alcohol to generate the porous
cylindrical
micro-domain. Polydimethylsiloxane (\textit{PDMS}) was then spin
coated onto the porous
film surface. The film was heated to facilitate the movement of
PDMS into
the pores, and then etched with fluorine and oxygen plasmas to
remove the
polymeric material, leaving only silicon oxide pillars. The
effect of pore
diameter on the size and quality of silicon oxide pillar was
investigated.
Larger pores generated higher quality pillars. Areal densities
from 0.5 to 2
Teradots per inch square were achieved. The silicon oxide
produced had a
good ion-etch resistance, enabling pattern transfer the pillar
pattern to
underlying magnetic media.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.69
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