Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00266 : Band Alignment of atomic layer deposited HfO2 on clean and N passivated Germanium surfaces
Author:
Hard x-ray photoelectron spectroscopy (HAXPES) has been used to
study the
band alignment between atomic layer deposited (ALD) HfO2 on clean
Ge (100)
and
nitrogen treated Ge (100) surfaces. The position of the
valence-band maximum
was
determined by convolving theoretically calculated density of
states from
first-principles
calculations and comparing with experimental valence-band data. The
valence-band offset was found to be 3.2 $\pm $ 0.1 and 3.3 $\pm $
0.1 eV for
the samples grown on clean and N passivated Ge, respectively. The
oxide
charge however shows a significant increase between the two
samples. The
small change in the band offset between the two systems strongly
indicates
negligible contribution of the interface to the
conduction/valence-band
barrier and the band alignment of the heterojunctions.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.266
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