Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00254 : The electrical and magnetic properties of C-doped ZnO film
Author:
The theoretical explanation on the room temperature
ferromagnetism (RTF) in
ZnO:C is based on the C incorporation at the O-site and the
consequent
exchange interaction between the localized C2p spins and
valence-band holes.
Here, we investigated the C incorporation site and the electrical
properties
of C-doped ZnO films grown by pulsed laser deposition (PLD) at
both an
oxygen rich and a poor conditions. Contrary to the theoretical
explanations,
all the C-doped ZnO films exhibited n-type conductivity.
Furthermore, most
of the carbons were not incorporated at the O-site, but rather at
the
interstitial or Zn site, or formed C clusters. Our experimental
results
indicate that the defect-induced ferromagnetism mechanism can
better explain
most of the observed RTF in the PLD grown ZnO:C films.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.254
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