Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00245 : Properties of anisotropically etched graphene devices
Author:
Mechanically exfoliated graphene on a SiO2 substrate was etched
using a solution of nickel nanoparticles. Using an atomic force
microscope, etch lines 10 nm in width were observed. In addition,
etch lines made angles of only 60 and 120 degrees and did not
cross one another indicating that the etching occurs along a
crystallographic edge. This resulted in structures such as
equilateral triangles and nanoribbons as narrow as 35 nm wide. We
have investigated these devices using Raman spectroscopy and
scanning tunneling spectroscopy to determine the quality of the
crystallographic edges and the local electronic properties.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.245
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