Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00195 : Synthesis and characterization of ZnO nanostructures for sensor application
Author:
ZnO nanostructures including nanoparticles (diameter about 50nm), nanorods
(diameter about 150 nm and length about 1-1.5$\mu $m) and nanoparticles
(diameter $\sim $ 20 nm) were prepared onto Si (100) substrates using both
r.f sputtering and PLD technique, respectively. Thermal annealing was
performed at 800 $^{o}$C in atmosphere for 2 hours to improve the qualities
of ZnO crystalline structures. X-ray diffraction, electron scanning
microscope and Raman scattering have been used to characterize all these
nanostructured samples
After synthesis and initial characterizations, the ZnO nanostructure-based
field effect transistor sensors have been designed, fabricated, and tested.
High sensitivity (few PPM), quick time response (less than 1 second) of the
newly designed sensors have been achieved. Experimental data indicate that
the sensitivity of the sensor highly relies on the operating temperature.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.195
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