Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00172 : Effect of Temperature, Pressure and Precursor flux ratios on InSb Thin film Growth: Morphology and Properties
Author:
We have investigated the growth of InSb thin films on InAs and GaAs
substrates by Chemical Beam Epitaxy (CBE). Raman spectroscopy
measurements
show that the optical properties of the grown layers is not
greatly affected
even when varying the growth conditions over a wide range
(varying the V/III
flux ration between 1 and 10, growth temperature between
390-480$^{\circ}$C).
The lattice mismatch between the layers and substrates, results
in regions
of no growth during the deposition of InSb layers. To circumvent
this
problem, the growth process is preceded by a 10 mins exposure of the
substrates to TMIn. This step eliminates the regions of no growth.
Our results show that at constant pressure, the growth rate
decreases with
increasing temperature and with increasing V/III flux ratio. A
much slower
response was observed for increasing antimony partial pressure.
The lattice
mismatch between the layer and substrate give rise to stacking
fault and
twins. A decrease in particle size from 34.89 to 9.95nm was
observed for
increasing flux ratio and an increase from11.31 to 32.68nm for
increasing
temperature. Evidence of Raman spectroscopy results confirms the
crystalline
nature of the deposited films. Details of our results will be
presented at
the meeting.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.172
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