Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00138 : Determination of property in semiconductors
Author:
In this work it is doing a comparative study of the most
conventional
semiconductors in electronics, such as silicon (Si), germanium
(Ge) and
gallium arsenide (GaAs). We present the mathematical development
of the
magnitude that determines the intrinsic semiconductor property,
which is the
concentration of charge carriers, and is discussed in each case
with respect
to temperature variation. On the other hand, in the case of
extrinsic
semiconductors is calculated potential barrier of a pn junction.
The task to make in this work is to use the intrinsic
concentration of each
material and their respective potential barrier to verify their
behavior in
relation to temperature. In the case of reverse bias generates a
graphical
output capacitance associated with these quantities. It is also
used matlab
to solve the transcendental equation that defines the
relationship between
voltage, resistance and current of a semiconductor diode bias. These
demonstrations and concepts are important because they govern the
operation
of basic electronic devices and can characterize the differences
between the
Si, Ge and GaAs.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.138
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2021 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
1 Research Road, Ridge, NY 11961-2701
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700