Bulletin of the American Physical Society
APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011; Dallas, Texas
Abstract: C1.00125 : Investigation of Mg- and Si- doped AlN epilayers by Transmission Electron Microscopy
Author:
Aluminum nitride (AlN) has emerged as a promising deep ultraviolet (UV)
material for the development of optoelectronic devices operating in deep UV
region. Low dislocation density AlN on sapphire substrate has been achieved
by metal organic chemical vapor deposition technique. Doping in AlN is very
crucial in order to use it in active devices. Silicon and magnesium are
usually used for n- and p- type doping in III-nitride materials. We report
on microstructure analysis of Mg- and Si- doped AlN epilayers by
transmission electron microscopy (TEM). The samples were grown on low
dislocation density AlN/sapphire templates. Cross section and plan view TEM
images were taken to characterize the threading dislocations in these
samples during the growth process. High resolution TEM images are also taken
to study the detailed nature of the dislocations, and their generation and
propagation. The TEM images will be compared with the undoped AlN epilayers
to investigate the effect of doping in the generation/annihilation of
threading dislocations. Implications of our finding for the applications in
deep UV optoelectronic devices will be discussed.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.C1.125
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