Session V15: Focus Session: Spins in Semiconductors - Spin Currents III

8:00 AM–11:00 AM, Thursday, March 24, 2011
Room: D171

Sponsoring Units: GMAG DMP FIAP
Chair: Ian Appelbaum, University of Maryland

Abstract ID: BAPS.2011.MAR.V15.8

Abstract: V15.00008 : Spin injection studies on thin film Fe/MgO/Si tunneling devices

9:24 AM–9:36 AM

Preview Abstract MathJax On | Off   Abstract  

Authors:

  Jonas Beardsley
    (Ohio State University)

  Yong Pu
    (Ohio State University)

  Adrian Swartz
    (University of California Riverside)

  Vidya Bhallamudi
    (Ohio State University)

  Roland Kawakami
    (University of California Riverside)

  Ezekiel Johnston-Halperin
    (Ohio State University)

  Chris Hammel
    (Ohio State University)

  Jon Pelz
    (Ohio State University)

We report progress on the injection of spin polarized electrons into 35 nm thick Si films, using Fe/MgO injector/tunnel barrier structures grown by molecular beam epitaxy on SIMOX silicon-on-insulator substrates. The device requires heavy top-surface n-type doping of the Si film to produce a suitable tunnel barrier, accomplished by diffusion from a spin-on phosphorous-doped glass. Measurements indicate a roughly exponential doping profile with 7E20 per cubic cm at the top surface and a 2 nm decay length. Three terminal measurements showed evidence of spin injection similar to reports of Jansen et al. [1], while injection with a thinner MgO barrier shows more complicated behavior. On-going measurements and modeling will be discussed.\\[4pt] [1] R. Jansen et al.; Nature 462; 491 (2009) Funding for this research was provided by the Center for Emergent Materials at the Ohio State University, an NSF MRSEC (Award Number DMR-0820414).

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.V15.8