Session L32: Focus Session: Nano-Optics, Semiconductor and Metal Nanostructures
2:30 PM–5:30 PM, Tuesday, March 22, 2011
Room: C144
Sponsoring Unit:
DMP
Chair: Henry O. Everitt, Department of the Army, Redstone Arsenal
Abstract ID: BAPS.2011.MAR.L32.10
Abstract: L32.00010 : Photoreflectance measurements of single wurtzite InP nanowires
4:42 PM–4:54 PM
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Abstract 
Authors:
M. Montazeri
(University of Cincinnati)
A. Wade
(University of Cincinnati)
S. Perera
(University of Cincinnati)
K. Pemasiri
(University of Cincinnati)
L.M. Smith
(University of Cincinnati)
H.E. Jackson
(University of Cincinnati)
J.M. Yarrison-Rice
(Miami University)
S. Paiman
(Australian National University)
Q. Gao
(Australian National University)
H.H. Tan
(Australian National University)
C. Jagadish
(Australian National University)
We have carried out photoreflectance measurements from a single semiconductor nanowire for the first time to our knowledge. We show that photoreflectance is an easy, quick and nondestructive technique which could be used to study the electronic band structure of a single semiconductor nanowire at both room and low temperatures. We have used photoreflectance to study electronic band structure of single wurtzite InP nanowires at room and low temperatures. Nanowires were grown by MOCVD using 100nm Au-nanoparticle catalysts. Derivative like features in the photoreflectance spectrum around the fundamental gaps allow us to extract energies of 1.50eV, 1.53eV and 1.70eV for A, B and C excitons of wurtzite an InP nanowire at low temperature. These values are compared to values obtained by photoluminescence-excitation and photocurrent measurements. Supported by the NSF ({\#}0701703, {\#}0806700 and {\#}0806572) and the Australian Research Council.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.L32.10