Session L32: Focus Session: Nano-Optics, Semiconductor and Metal Nanostructures

2:30 PM–5:30 PM, Tuesday, March 22, 2011
Room: C144

Sponsoring Unit: DMP
Chair: Henry O. Everitt, Department of the Army, Redstone Arsenal

Abstract ID: BAPS.2011.MAR.L32.8

Abstract: L32.00008 : Single GaN nanowire polariton luminescence

4:18 PM–4:30 PM

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Authors:

  Ayan Das
    (University of Michigan, Ann Arbor)

  Marc Jankowski
    (University of Michigan, Ann Arbor)

  Wei Guo
    (University of Michigan, Ann Arbor)

  Pallab Bhattacharya
    (University of Michigan, Ann Arbor)

Polariton emission from a single GaN nanowire in the strong coupling regime has been investigated in the temperature range of 200-300 K. GaN nanowires grow in the wurtzite structure with the c-axis along the growth direction. The polariton dispersion characteristics are determined from angle-resolved reflectivity measurements. The light emission characteristics measured as a function of incident optical power density reveal a distinct non-linear behavior and threshold, accompanied by a sharp decrease in linewidth over an order of magnitude and a small blue-shift that is ascribed to polariton-polariton interactions. Angle-resolved photoluminescence measurements above threshold indicate polariton cooling to the bottom of the lower polariton branch, triggered by the onset of stimulated scattering which is characterized by a fast relaxation time as obtained from time resolved photoluminescence measurements. Emission above threshold is linearly polarized. Second order correlation measurements and interferomtery indicate significant bunching below threshold and a coherent emission above threshold. These measurements indicate a coherent emission. Photon lasing due to carrier population inversion is observed at higher pump power densities.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.L32.8