Session D28: Focus Session: Graphene Growth, Characterization, and Devices: Metal Substrates
2:30 PM–5:30 PM, Monday, March 21, 2011
Room: C156
Sponsoring Unit:
DMP
Chair: Kevin McCarty, Sandia National Laboratory
Abstract ID: BAPS.2011.MAR.D28.3
Abstract: D28.00003 : Graphene Made Easy: A Simple Method to Grow Large-Area Single-Layer Graphene on Copper Foils
2:54 PM–3:06 PM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
S. Gadipelli
(UPENN/NIST)
I. Calizo
(NIST)
J. Ford
(UPENN/NIST)
G. Cheng
A. H. Walker
(NIST)
T. Yildirim
(NIST/UPENN)
In order to realize the remarkable properties of graphene in practical devices, an easy, scalable, and inexpensive synthesis method is necessary. Currently the most promising approach is through chemical vapor deposition (CVD). However, this method requires expensive CVD furnaces and flow controllers, as well as a large amount of explosive gases (H$_{2}$ and CH$_{4})$. Consequently, it is desirable to establish alternative methods to grow large-area, single-layer graphene that are simple and that can be carried out in an ordinary research laboratory. In this talk, we will discuss our systematic study of the parameters that are critical for high-quality, single-layer graphene formation. Our results not only shed light on the graphene growth mechanism, but have also yielded a straightforward synthesis method that requires neither H$_{2}$/CH$_{4}$ nor any special CVD equipment. We have prepared graphene samples at the inch scale that have been characterized by Raman spectroscopy, optical transmittance, and sheet resistance measurements. Our method is simple, safe, and economical and will be of value to both fundamental researchers and nanodevice engineers.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.D28.3