### Session B37: Focus Session: Graphene Growth, Characterization, and Devices: Devices and Contacts

11:15 AM–2:15 PM, Monday, March 21, 2011
Room: C146

Chair: Thomas Seyller, University of Erlanger-Nuernberg

Abstract ID: BAPS.2011.MAR.B37.4

### Abstract: B37.00004 : Complementary-like semiconducting graphene logic inverters

11:51 AM–12:03 PM

Preview Abstract MathJax On | Off     Abstract

#### Authors:

Song-Lin Li
(National Institute for Materials Science, Japan)

Hisao Miyazaki
(National Institute for Materials Science, Japan)

Kazuhito Tsukagoshi
(National Institute for Materials Science, Japan)

Akinobu Kanda
(University of Tsukuba, Japan)

The application of graphene as a post-silicon channel material is an interesting but challenging topic due to its metallic nature and low switching ratio. It is expected that the condition would change if a sizeable band gap is introduced. Here we report the electrical characteristics of the first semiconducting graphene-based logic inverters. Free of doping, the \textit{p}- and \textit{n}- branches in the bipolar graphene transistors are delicately used as the complementary components required in logic devices. Within perpendicular electric fields, large transport band gap ($>100$\,meV) and high switching ratio ($\sim200$ at 77\,K) are obtained in bilayer graphene channels. Besides, a simple and high capacitive-efficiency top gate with natural alumina dielectric ($\sim0.9$\,\textrm{$\mu$}F/cm$^2$) is adopted and the operating bias is lowered within 2\,V. For the first time, $>1$ voltage gain are extracted from graphene inverters. Voltage gain up to 8 and 2 are achieved at liquid-nitrogen and room temperatures, respectively. Importantly, a match between input and output voltage levels is realized, indicating the potential for direct cascading between multiple devices for future large-scale integration.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.B37.4