Session B12: Focus Session: Dopants and Defects in Semiconductors: Compound Semiconductors I
11:15 AM–2:15 PM, Monday, March 21, 2011
Room: D223/224
Sponsoring Unit:
DMP
Chair: Su-Huai Wei, National Renewable Energy Laboratory
Abstract ID: BAPS.2011.MAR.B12.4
Abstract: B12.00004 : Defects and Carrier Compensation in CdTe
11:51 AM–12:27 PM
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Abstract 
Author:
Mao-Hua Du
(Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory)
CdTe is a very useful semiconductor material for its radiation detection and thin-film solar cell applications. Good carrier mobility and lifetime are needed for CdTe since efficient carrier collection is essential for the success of both applications. On the other hand, high resistivity is required for radiation detection for suppressing dark current and device noise. This is in contrast to CdTe-based solar cells, in which low resistivity is desired. In this talk, I will discuss the properties of native defects and impurities in CdTe with emphasis on carrier compensation and its implications in radiation detection and solar cell applications.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.B12.4