Session A33: Focus Session: Dielectric, Ferroelectric, and Piezoelectric Oxides: Piezoelectrics, Oxides on Semiconductors, and Applications

8:00 AM–11:00 AM, Monday, March 21, 2011
Room: C143/149

Sponsoring Units: DMP DCOMP
Chair: Valentino Cooper, Oak Ridge National Laboratory

Abstract ID: BAPS.2011.MAR.A33.7

Abstract: A33.00007 : Linking the Electronic and Atomic Structure of Epitaxial Complex Oxides on Semiconductors

9:36 AM–9:48 AM

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Authors:

  Divine Kumah
    (Department of Applied Physics, Yale University)

  James Reiner
    (Department of Applied Physics, Yale University)

  Joseph Ngai
    (Department of Applied Physics, Yale University)

  Yaron Segal
    (Department of Applied Physics, Yale University)

  Alexie Kolpak
    (Department of Applied Physics, Yale University)

  Diana Qiu
    (Department of Applied Physics, Yale University)

  Sohrab Ismail-Beigi
    (Department of Applied Physics, Yale University)

  Charles Ahn
    (Department of Applied Physics, Yale University)

  Fred Walker
    (Department of Applied Physics, Yale University)

  Dong Su
    (Brookhaven National Laboratory)

  Yi Zhu
    (Brookhaven National Laboratory)

  Zhan Zhang
    (Argonne National Laboratory)

Understanding the interfacial coupling between materials with different electronic properties is critical to achieve the integration of epitaxial complex oxides with semiconductors. Using a combination of synchrotron x-ray diffraction and first principles calculations, we show that the electronic properties and atomic structure of epitaxial SrTiO$_{3}$ films on Si, and BaTiO$_{3}$ films on Ge are directly linked to the chemical composition at their respective interfaces. Sub-angstrom [001] cation-anion displacements observed in the SrTiO$_{3}$/Si system, lead to a positively polarized film. The polar distortions are found to arise from an interplay between compressive strain and localized interface states. In contrast to SrTiO$_{3}$/Si, we find that the BaTiO$_{3}$/Ge interface has a 2x1 structure that drives an in-plane polarization.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.A33.7