Session A30: Graphene: Growth, Properties and Devices

8:00 AM–11:00 AM, Monday, March 21, 2011
Room: C147/154

Sponsoring Unit: DCMP
Chair: Rodney Ruoff, University of Texas at Dallas

Abstract ID: BAPS.2011.MAR.A30.11

Abstract: A30.00011 : Large Area Chemical Vapor Deposition Graphene Photodetectors

10:00 AM–10:12 AM

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  Allen Hsu

  Han Wang
  Ki Kang Kim
  Jing Kong
  Tomas Palacios

We investigate large area graphene photodetectors based on graphene grown by Chemical Vapor Deposition on Cu foils and then transferred to SiO$_{2}$/Si wafers. Through scanning photocurrent microscopy (SPM) at 532 nm, we compare the performance of CVD fabricated devices using Ti/Pd/Au, Au, and Pt graphene metal junctions with those from literature fabricated through mechanical exfoliation. Our initial experiments show that photocurrent from CVD graphene is about an order of magnitude smaller than devices in literature. Non-idealities related to material properties, defects, and transfer related inhomogenities are believed to be the cause of the discrepancy. These effects are studied through concurrent registration of atomic force microscopy, optical microscopy, Raman Microscopy, and SPM. In addition to intrinsic material property effects, fabrication related issues of graphene-metal junctions are also explored.

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