Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session J25: Focus Session: Electric-to-Light Conversion and Optics in Semiconductors II
11:15 AM–2:15 PM,
Tuesday, March 16, 2010
Sponsoring Units: DMP GERA
Chair: Ferdinand Scholz, Ulm University
Abstract ID: BAPS.2010.MAR.J25.3
Abstract: J25.00003 : Spectroscopic Properties of Zinc Oxide Nanostructures Grown by Chemical Vapor Deposition*
12:27 PM–12:39 PM
Preview Abstract Abstract
(The University of Alabama)
Seongsin M. Kim
Zinc oxide (ZnO), with its large bandgap energy of 3.37 eV and exciton binding energy, is a promising semiconductor material for a number of optoelectronic devices and applications ranging from solid-state lighting to photovoltaics, and can potentially serve as a solid matrix for nanoscale sensors. Nanostructures of ZnO have recently attracted a lot of interest because of their good crystalline quality and unique optical characteristics. Here, we focus on the study physical properties of ZnO nanowires grown by chemical vapor deposition, including absorption, photoluminescence, Raman, and terahertz time-domain spectroscopy.
*This work used the Central Analytical Facility, which is supported by The University of Alabama.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.J25.3
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