Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session H14: Focus Session: Transport Properties of Nanostructures III: Theory and Computation I
8:00 AM–11:00 AM,
Tuesday, March 16, 2010
Sponsoring Unit: DMP
Chair: Jeffrey Neaton, Lawrence Berkeley National Laboratory
Abstract ID: BAPS.2010.MAR.H14.9
Abstract: H14.00009 : Ion-induced quantum transport in ultrathin amorphous silicon dioxide films*
10:00 AM–10:12 AM
Preview Abstract Abstract
(Vanderbilt University, University of Kentucky)
(Vanderbilt University, Oak Ridge National Laboratory)
Heavy-ion beams impinging on electronic devices are known to produce conducting paths in oxide thin films. Here we report the results of first-principles calculations of the effect of ion-induced atomic displacements on the current-voltage characteristics of ultrathin oxides. We use density functional theory and the recently developed ``Source and Sink'' method to calculate currents in defected amorphous silicon dioxide layers sandwiched between two Al electrodes. The resulting current-voltage characteristics show significant enhancement of the electron tunneling and are found to depend on both the spatial distribution of ion-induced defects and the distribution of the defect energy levels in the oxide band gap. The quantum transport results are used to define a percolation model using Mott defect-to-defect tunneling. The calculated currents are in agreement with experimental data.
*This work was supported in part by AFOSR MURI grant F 49620-99-1-0289.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.H14.9
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