Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session A25: Focus Session: Dopants and Defects in Semiconductors - ZnO
8:00 AM–11:00 AM,
Monday, March 15, 2010
Sponsoring Unit: DMP
Chair: Mike Stavola, Lehigh University
Abstract ID: BAPS.2010.MAR.A25.10
Abstract: A25.00010 : Enhanced formation of Zn-interstitials by their attractive interactions with O-vacancies in ZnO*
10:12 AM–10:24 AM
Preview Abstract Abstract
(Korea Research Institute of Standards and Science, Daejeon, South Korea)
(Pusan National University, Pusan, Korea)
O-deficiency is known to give n-type doping in ZnO without intentional dopants. Even though the native defects, O-vacancies and Zn-interstitials, have been excluded theoretically as the main sources of the n-type doping, experiments have still shown the close relationship between the n-type doping and the O-deficiency. In this work, we investigated the interactions between the O-vacancies and Zn-interstitials in ZnO based on density-functional theory calculations, and propose that the formation of Zn-interstitials can be significantly enhanced by the attractive interactions with O-vacancies. The enhanced formation of Zn-interstitials can be an important source of the n-type doping in O-deficient ZnO.
*Y.S.K. acknowledges the support by Nano R\&D program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (No. 2009-0082489).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.A25.10
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