Bulletin of the American Physical Society
APS March Meeting 2010
Volume 55, Number 2
Monday–Friday, March 15–19, 2010; Portland, Oregon
Session X21: Focus Session: Graphene: Devices
2:30 PM–5:42 PM,
Thursday, March 18, 2010
Room: Portland Ballroom 251
Sponsoring Unit: DMP
Chair: Vasili Perebeinos, IBM
Abstract ID: BAPS.2010.MAR.X21.4
Abstract: X21.00004 : Graphene Electronics and Optoelectronics*
3:06 PM–3:42 PM
Preview Abstract Abstract
(IBM T.J. Watson Research Center)
Because of its zero band-gap, the current in nonolayer graphene cannot be effectively switched off as in conventional semiconductors. However, the limited field tuning of the current afforded by its DOS and its exceptionally fast carrier transport can be used to build advanced high-frequency analog devices. I will discuss the device physics, fabrication and operation of RF graphene transistors with cut-off frequencies up to 100GHz. Despite its gapless nature, built-in fields at graphene-metal contacts can also be used to construct ultrafast photoconductors. Such devices will be demonstrated and utilized for error-free detection of GBit/s optical data streams. Finally, we will discuss the electrical bandgap opening in bilayer graphene and demonstrate bilayer transistors operating at room temperature. Co-workers: Y.-M. Lin, F. Xia, T. Mueller, K. Jenkins, D. Farmer, C. Dimitrakopoulos, H.-Y. Chiu, A. Valdes-Garcia, A. Grill.
*Work supported by DARPA under Contract FA8650-08-C-7838 through the CERA program.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.X21.4
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