### Session W29: Focus Session: Thermoelectrics V: III-V's & Nanostructures

11:15 AM–2:03 PM, Thursday, March 18, 2010
Room: C123

Sponsoring Units: DMP FIAP GERA
Chair: Lilia Woods, University of South Florida

Abstract ID: BAPS.2010.MAR.W29.7

### Abstract: W29.00007 : Thermoelectric Properties of MOVPE Grown AlInN, Lattice-Matched to GaN

12:51 PM–1:03 PM

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#### Authors:

Jing Zhang
(Lehigh Univ.)

Hua Tong
(Lehigh Univ.)

Guangyu Liu
(Lehigh Univ.)

Juan Herbsommer
(Lehigh Univ.)

Gensheng Huang
(Lehigh Univ.)

Nelson Tansu
(Lehigh Univ.)

In this work, we investigate experimentally the growth and thermoelectric properties, i.e., thermal conductivity, Seebeck coefficient, and electrical conductivity, of n-type wurtzite high quality Al$_{x}$In$_{1-x}$N, grown on GaN template on sapphire substrate by MOVPE, in-plane lattice-matched to GaN. The thermal conductivity is measured by 3$\omega$ method differential technique for thin films. The thermal conductivity value of Al$_{0.83}$In$_{0.17}$N is measured as 5.7 W/(mK). The Seebeck coefficient is calculated as the ratio of measured voltage difference and temperature difference when a temperature gradient is created in the sample. The absolute Seebeck coefficient value of Al$_{0.83}$In$_{0.17}$N is measured as 6.2$\times$10$^{-4}$ V/K. The sheet resistivity of lattice-matched Al$_{0.83}$In$_{0.17}$N is measured using Van der Pauw scheme and the electric conductivity is acquired accordingly to be 2.9$\times$10$^{4}$ /($\Omega$.m). The Z*T value of Al$_{0.83}$In$_{0.17}$N obtained is above 0.2 at room temperature. The results indicate AlInN based alloys are good candidates for thermoelectric devices.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.W29.7