Session Q33: Focus Session: Complex Oxide Thin Films -- Oxide/Semiconductor Interfaces and Defects
11:15 AM–2:15 PM, Wednesday, March 17, 2010
Room: E143
Sponsoring Units:
DMP GMAG
Chair: Susanne Stemmer, University of California, Santa Barbara
Abstract ID: BAPS.2010.MAR.Q33.6
Abstract: Q33.00006 : Ionic-bombardment, an effective way to create memory effect on undoped SrTiO3
12:39 PM–12:51 PM
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Abstract 
Authors:
Yong Seung Kim
(Rutgers Univ.)
Heiko Gross
(Rutgers Univ.)
Namrata Bansal
(Rutgers Univ.)
Carlos Chaparro
(Rutgers Univ.)
Seongshik Oh
(Rutgers Univ.)
Here we present bistable switching behaviors in undoped SrTiO3 single crystals treated by thermal annealing and Ar-ion-beam bombardment. So far, there have not been any reports of memory effect at a macroscopic scale for SrTiO3 having no cation dopants. We observed memory effects in both thermally annealed and ion-beam bombarded samples. However, the ion-beam bombarding provided significant better switching behaviors than the thermal annealing. We propose that this difference between the annealed and the ion-beam-bombarded sample in their switching performance is related to the concentration of oxygen vacancy clusters. Clustered vacancies are much less mobile than a single vacancy, and thus not an effective player for the switching event. Thermal annealing produces more clustered vacancies than ion-beam-bombardment. Creating vacancies while minimizing the clustering rate must be the key to a viable resistive memory device. We show that ionic bombardment is an effective method for such devices.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.Q33.6