Session P21: Focus Session: Nano-Graphene
8:00 AM–10:36 AM, Wednesday, March 17, 2010
Room: Portland Ballroom 251
Sponsoring Unit:
DMP
Chair: Philip First, Georgia Institute of Technology
Abstract ID: BAPS.2010.MAR.P21.11
Abstract: P21.00011 : A three dimensional approach to selective growth and photo-lithographic fabrication of graphene nanoribbon on SiC
10:00 AM–10:12 AM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
Ming Ruan
(School of Physics, Georgia Institute of Technology)
Mike Sprinkle
(School of Physics, Georgia Institute of Technology)
Xiaosong Wu
(School of Physics, Georgia Institute of Technology)
Yike Hu
(School of Physics, Georgia Institute of Technology)
Miguel Rubio-Roy
(School of Physics, Georgia Institute of Technology)
John Hankinson
(School of Physics, Georgia Institute of Technology)
Claire Berger
(School of Physics, Georgia Institute of Technology \& CNRS/Institut Neel)
Walt de Heer
(School of Physics, Georgia Institute of Technology)
We present a unique three-dimensional process for fabrication of epitaxial graphene devices on hexagonal silicon carbide. Pre-patterning of SiC substrate allows graphene growth on SiC crystal planes other than typical (000-1) and (0001) planes. Selective graphitization on these crystal planes are reported, which enables definition of graphene nanoribbon by standard photolithographic processing. Measurement of devices demonstrates the electronic viability of graphene grown on these SiC crystal planes and over SiC step edges, suggesting technologically practical methods of obtaining semiconducting graphene nanoribbons. Fabrication of $>$10,000 transistors on a 0.24cm$^{2}$ chip illustrates the scalability of this process.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.P21.11