Bulletin of the American Physical Society
2009 APS March Meeting
Volume 54, Number 1
Monday–Friday, March 16–20, 2009; Pittsburgh, Pennsylvania
Session A2: Transport in Oxide Interfaces |
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Sponsoring Units: DCMP Chair: Darrell Schlom, Cornell University Room: Spirit of Pittsburgh Ballroom BC |
Monday, March 16, 2009 8:00AM - 8:36AM |
A2.00001: A Novel Approach to Opening Quantum Mechanical Limitations of Semiconductor Electronics Invited Speaker: At interfaces between insulating oxides, robust electron gases have been generated that feature unique electronic properties, such as electric-field tunable metal-insulator transitions. Inspired by the properties of such systems we propose a novel device architecture that may resolve fundamental limitations of standard, semiconductor electronics. [Preview Abstract] |
Monday, March 16, 2009 8:36AM - 9:12AM |
A2.00002: Oxide Nanoelectronics On Demand Invited Speaker: Electronic confinement at nanoscale dimensions remains a central means of science and technology. I will demonstrate nanoscale lateral confinement of a quasi-two-dimensional electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface and show how it can be exploited to create a variety of electronic devices. Using a conducting AFM probe it is possible to create tunnel junctions and field-effect transistors (FETs) with feature sizes comparable to the diameter of a single-wall nanotube. These devices can be modified or erased without complex or irreversible lithographic procedures. This new, on-demand nanoelectronics platform has the potential for widespread technological application. [Preview Abstract] |
Monday, March 16, 2009 9:12AM - 9:48AM |
A2.00003: Role of the surface in the interfacial metal-insulator transition in LaAlO$_3$/SrTiO$_3$ Invited Speaker: The observed metal-insulator transition in thin films of LaAlO$_3$ on SrTiO$_3$ depends critically on the film thickness: a reversible transition consistently works best with films 3 unit cells thick. Using first-principles density functional calculations, the role of the surface in the interfacial metal insulator transition will be examined. Water adsorbs strongly to the surface, dissociating and causing an unusual striped reconstruction. The adsorbates allow the creation of wires and devices at the interface. The positively charged AFM removes OH adsorbates, changing the interface from insulating to metallic. The negatively charged AFM removes H adsorbates, reversing the process. [Preview Abstract] |
Monday, March 16, 2009 9:48AM - 10:24AM |
A2.00004: Potential Barrier Lowering and Electrical Transport at the LaAlO$_{3}$/SrTiO$_{3}$ Interface Invited Speaker: Interfacial phenomena form the basis for modern-day devices and continue to be an area of fundamental interest in condensed matter research. Advances in oxide thin film fabrication have enabled the synthesis of atomically precise oxide interfaces and hence have allowed for controlled investigation of interfacial phenomena in these materials. With the rich variety of functionalities exhibited by transition-metal oxides, a wide array of novel properties may be achieved at oxide heterointerfaces. An exemplary study is the discovery of metallicity at the interface of two band insulators, LaAlO$_{3}$ (LAO) and SrTiO$_{3}$ (STO), which has stimulated many subsequent experimental as well as theoretical studies. However, there is still intense debate on the origin of metallicity, specifically whether it arises from electronic reconstruction or oxygen vacancies. Using a combination of vertical transport measurements across and lateral transport measurements along the LAO/STO heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Transport measurements across the heterointerface, indicate that barrier lowering and enhanced band bending extends over 2.5 nm into LAO as well as STO. We explain the origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LAO film on a STO substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel. \\[4pt] *In collaboration with Franklin Wong, Miaofang Chi, Rajesh Chopdekar, Brittany Nelson-Cheeseman and Nigel Browning. [Preview Abstract] |
Monday, March 16, 2009 10:24AM - 11:00AM |
A2.00005: Modulation Doping of Electrons and Holes at Oxide Interfaces Invited Speaker: |
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