Bulletin of the American Physical Society
2009 APS March Meeting
Volume 54, Number 1
Monday–Friday, March 16–20, 2009; Pittsburgh, Pennsylvania
Session A5: Nanostructuring with Ions |
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Sponsoring Units: FIAP Chair: John Melngailis, University of Maryland Room: 401/402 |
Monday, March 16, 2009 8:00AM - 8:36AM |
A5.00001: High aspect ratio 3D nanopatterning using Proton Beam Writing Invited Speaker: Proton beam writing (PBW) is a new direct write lithography using MeV protons, and is unique because of its ability to fabricate 3D structures of high aspect ratio structures directly in resist material like PMMA, SU-8 and HSQ. The introduction by CIBA, Singapore of a dedicated PBW facility, capable of writing at the micro- and nano- scale has facilitated high aspect ratio nanostructuring. PBW has demontrated high aspect ratio walls in HSQ down to the 20nm level. In recent experiments details down to sub 20 nm have been achieved in PMMA. Monte-Carlo calculations have shown that structuring down to the nanometer level is feasible. All this is possible because of the virtual absence of proximity effects (unwanted resist exposure by stray secondary electrons). The design and performance of this unique nanoprobe facility will be discussed. Two potential fields of application (eg nanofluidics and nanowire integration) of PBW will be discussed. Currently nanofluidics devices have typically only \textbf{one} critical dimension below 100 nm. Here we will introduce PBW as a powerful technique to fabricate molds for replication of PDMS nanofluidic circuits down to the sub 100 nm level in \textbf{two} dimensions. Initial chips with dimension down to 150 nm have successfully been used to study DNA folding in quasi-1d nanochannels in tandem with fluorescence imaging. Since the size of these PDMS nanochannels is not limited by the PDMS or PBW further miniaturization down to the sub 100 nm level is a realistic goal and initial results will be discussed. Nanowires are a potential building block for nano-electronic devices, and one critical problem is the integration of nanowires to form contacts. Porous alumina templates and high energy ion-tracks have been used for the production of nanowire templates in a random orientation. Since PBW is the only true 3D direct write nanolithographic technique it can be used to fabricate nanowire templates in a controlled manner. [Preview Abstract] |
Monday, March 16, 2009 8:36AM - 9:12AM |
A5.00002: Left-handed metamaterials operating in the visible: negative refraction and negative radiation pressure Invited Speaker: Forty years ago, V. Veselago derived the electromagnetic properties of a hypothetical material having simultaneously-negative values of electric permittivity and magnetic permeability [1]. Such a material, denominated ``left-handed'', was predicted to exhibit a negative index of refraction, as well as a number of other counter-intuitive optical properties. For example, it was hypothesized that a perfect mirror illuminated with a plane wave would experience a negative radiation pressure (pull) when immersed in a left-handed medium, as opposed to the usual positive radiation pressure experienced when facing a dielectric medium such as air or glass. Since left-handed materials are not available in nature, considerable efforts are currently under way to implement them under the form of artificial ``metamaterials'' -- composite media with tailored bulk optical characteristics resulting from constituent structures which are smaller in both size and density than the effective wavelength in the medium. Here we show how surface-plasmon modes propagating in a stacked array of metal-insulator-metal (MIM) waveguides can be harnessed to yield a volumetric left-handed metamaterial characterized by an in-plane-isotropic negative index of refraction over a broad frequency range spanning the blue and green. By sculpting this material with a focused-ion beam we realize prisms and micro-cantilevers which we use to demonstrate, for the first time, (a) in-plane isotropic negative-refraction at optical frequencies, and (b) negative radiation pressure. We predict and experimentally verify a negative ``superpressure'', the magnitude of which exceeds the photon pressure experienced by a perfect mirror by more than a factor of two. 1) V. Veselago, \textit{ Sov. Phys. Usp. }10, p.509 (1968). [Preview Abstract] |
Monday, March 16, 2009 9:12AM - 9:48AM |
A5.00003: Direct writing of electronic circuits and micromachining by focused ion beam (FIB) implantation Invited Speaker: The maskless implantation of FIBs in semiconductors creates a local doping. In n-type conducting sheets, p-lines are written to insulate n-regions laterally from each other or vice versa. In this way, conducting areas can be biased with respect to each other. Narrow paths are easily driven into depletion, creating lateral transistor channels. The advent of multi-focussed-ion-beams allows a more parallel writing of such integrated circuits. For ion beam milling, a new long-life Bismuth (Bi) source is developed and employed [1]. Bi is the heaviest, non-radioactive element and has thus a maximal impact on the material to be sputtered locally. It is non-toxic, well available, mono-isotopic, and inexpensive, has a low melting temperature, and comes even in clusters and the single charged particles make up 95{\%} of the whole FIB-beam. This means that the chromatic errors of the electrostatic Einzel-lenses in the FIB system are not important. Since heavy ions are slower than light ones at the same energy, Bi penetrates to a minimal depth into the target, leaving minimal contaminations. The sputter rate is about 5 times higher than the one of the usual Ga. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Bi is thus a good candidate to improve the performance of sputter-FIBs ultimately, up to replacing Ga. We developed FIB - liquid metal ion sources of nearly all metallic elements in the periodic table. In this way, practically all dopants can be introduced into semiconductors after epitaxial growth in a full ultra-high vacuum process, which enhances the flexibility of the material choice enormously. \\[4pt] [1] P. Mazarov, A. Melnikov, R. Wernhardt, and A.D. Wieck, Long-life bismuth liquid metal ion source for focussed ion beam micromachining application, Appl. Surf. Sci. 254, 7401 (2008). [Preview Abstract] |
Monday, March 16, 2009 9:48AM - 10:24AM |
A5.00004: Helium Ion Imaging and Milling at the Nanometer Dimensions Invited Speaker: The helium ion microscope (HeIM) is a new, powerful instrument for nano-metrology and nanotechnology. As an emerging imaging and measurement tool it offers several advantages over the traditional scanning electron microscope (SEM) currently in use in research and manufacturing facilities across the world. First, resolution 2 to 4 times better than that from comparable SEMs is theoretically possible, due to the very high source brightness and the short wavelength of the helium ions. Ion images with unprecedented resolution have been routinely collected on a wide range of samples with sub-nanometer features. More importantly, the interaction volume of the helium ion beam in the sample is substantially different in its size and shape from that of the electron beam in an SEM. As a consequence, the signals generated, especially secondary electrons, reveal more surface details. Imaging by the HeIM can further benefit from the superb depth of field and the fact that He ion imaging is less susceptible to sample charging. In addition, it is possible to compensate for charging by the use of an electron flood gun. Scattered He ions produced as a result of Rutherford scattering of the incident ions on the target nuclei can provide material contrast information that can be used for quantitative compositional analysis. Beyond imaging, the HeIM is a potent tool for milling and modifying surface structures at the nanometer scale, due to the relatively low mass of the helium ion, the narrow ion beam, and especially the low beam currents. It is possible to drill close to 10 nm diameter holes and mill other nanoscale structures that cannot be fabricated with any other method. It is expected that, as with the electron beam, it is feasible to expose resist and deposit various materials with He ion beam irradiation. The work is at its exploratory stage, and likely soon will yield more exciting results. This presentation will report on some of the newest research work on the NIST helium ion microscope. * Contribution of the National Institute of Standards and Technology; not subject to copyright [Preview Abstract] |
Monday, March 16, 2009 10:24AM - 11:00AM |
A5.00005: High speed focused ion and electron beam nanofabrication Invited Speaker: Both focused ion beams and electron beams can be used for direct, maskless, resistless nanofabrication as well as for lithography. So far the direct fabrication has been limited to applications such as photomask repair, circuit restructuring, failure analysis, and the creation of various highly specialized structures. Recent developments in maskless fabrication, so far aimed mainly at to resist exposure, suggest that this picture might change. For example, IMS in Vienna, Austria is developing an instrument that can be characterized as an ion beam or electron beam dot matrix printer. The total current on the sample available from this kind of instrument is at least three orders of magnitude larger than from a single beam instrument. This may lead to new applications of charged particle beam fabrication, as well as enable applications considered in the past but rejected because of very low throughput. An example of one such application is the direct writing of the identity in RFID tags using ion beam implantation. Recently we have also shown that electron beams can be used to deposit relatively pure platinum from an inorganic precursor gas, Pt(PF$_{3})_{4}$. Such metal deposits can be used as contacts to carbon nanotubes, semiconductor nano wires, organic fibers, or other structures where conventional lithography is impractical. [Preview Abstract] |
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