Bulletin of the American Physical Society
2009 APS March Meeting
Volume 54, Number 1
Monday–Friday, March 16–20, 2009; Pittsburgh, Pennsylvania
Session S1: Poster Session III (1-4:00pm): Polymer Physics II; Phase Transitions; General Theory; Insulators and Dieletrics; Semiconductors; Supplementary Abstracts; Post-Deadline Abstracts
1:00 PM,
Wednesday, March 18, 2009
Room: Exhibit Hall A
Abstract ID: BAPS.2009.MAR.S1.139
Abstract: S1.00139 : High Electron Mobility Al$_{x}$Ga$_{1-x}$N/GaN Heterostructures Grown by PAMBE on GaN Templates Prepared by MOCVD*
Preview Abstract Abstract
Authors:
Yen-Liang Chen
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Wen-Yuan Pang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Ming-Hong Gau
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Yu-Chi Hsu
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Wan-Tsang Wang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Jih-Chen Chiang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Ikai Lo
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.)
Chia-Ho Hsieh
(Institute of Material Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.)
Jenn-Kai Tsai
(Department of Electronic Engineering, National Formosa University, Yunlin, Taiwan, ROC.)
*The project is supported by National Research Council of Taiwan (NRC 95-2112-M-110-017-MY3) and by AFOSR/AOARD (AFMC, USAF) under grant number FA4869-07-1-4022.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.S1.139
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