Session P10: Focus Session: Multiferroics II
8:00 AM–10:48 AM, Wednesday, March 18, 2009
Room: 304
Sponsoring Unit:
FIAP
Chair: Serge Nakhmanson, Argonne National Laboratory
Abstract ID: BAPS.2009.MAR.P10.7
Abstract: P10.00007 : Ferroelectric switching behavior of (001) mono-domain BiFeO$_{3}$ thin films
9:36 AM–9:48 AM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
Seung-Hyub Baek
(University of Wisconsin-Madison)
Ho-Won Jang
(University of Wisconsin-Madison)
Chad Folkman
(University of Wisconsin-Madison)
Chang-Beom Eom
(University of Wisconsin-Madison)
Yulan Li
(Pennstate University)
Benjamin Winchester
(Pennstate University)
Long-qing Chen
(Pennstate University)
Christopher Nelson
(University of Michigan)
Xiao-qing Pan
(University of Michigan)
Ramamoorthy Ramesh
(University of California-Berkeley)
BiFeO$_{3}$ has drawn a great deal of attention as a single phase multiferroic material for the magnetoelectric device and non-volatile memory applications. BiFeO$_{3}$ has a magnetoelectric coupling effect between [111] polarization and (111) anti-ferromagnetic order, which allows manipulation of magnetic property by electric field. However, the anti-ferromagnetic plane can be switched only by non-180$^{o}$ polarization switching due to this coupling geometry. Thus, for magnetoelectric device applications, it is crucial to selectively control 71$^{o}$ (or 109$^{o})$ switching. Here, we report the selective control of ferroelectric switching by the size of switched area; local field by AFM tip and uniform field by large area top electrodes. The origin of this behavior will be discussed using phase-field simulations. This result implies that the geometry of magnetoelectric devices should be determined by considering the size of switching area. Moreover, this result can be expanded to other rhombohedral systems such as PMN-PT and PZT.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.P10.7