Session L10: Optical Properties of Nanostructures III: Quantum Dots, Nanowires, and Related Materials
2:30 PM–5:18 PM, Tuesday, March 17, 2009
Room: 304
Sponsoring Unit:
DMP
Chair: John McGuire, Los Alamos National Laboratory
Abstract ID: BAPS.2009.MAR.L10.3
Abstract: L10.00003 : Optical Aharonov-Bohm Effect for type-II InAs Quantum Dots
2:54 PM–3:06 PM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
Vincent R. Whiteside
(SUNY Buffalo)
Ian R. Sellers
(SUNY Buffalo)
Bruce D. McCombe
(SUNY Buffalo)
Huiyun Liu
(University College London)
The magnetic field dependence of the ground- and excited-state transitions in InAs quantum dots (QD), capped with a strain reducing layer of GaAs$_{0.76}$Sb$_{0.26}$, which results in a type-II band alignment, has been studied by magneto-photoluminescence (magneto-PL) spectroscopy. Oscillations in the PL intensity of both the excited state and ground state magneto-PL are observed. Similar oscillations in intensity have been previously attributed to the Optical Aharonov-Bohm (OAB) effect in other type-II QD systems. In the present case the ground state oscillations are only observed at low excitation power, for which only the ground state is occupied. At higher excitation power the excited state oscillations are more pronounced than the ground state oscillations. The room temperature emission wavelength of these QDs matches the optical telecommunications window at 1.55 $\mu $m, so the OAB effect in these structures may be useful in future devices.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.L10.3