Session J28: Focus Session: Graphene Device and Applications I

11:15 AM–2:15 PM, Tuesday, March 17, 2009
Room: 330

Sponsoring Unit: FIAP
Chair: James Hannon, IBM

Abstract ID: BAPS.2009.MAR.J28.4

Abstract: J28.00004 : Non-volatile memory devices using graphene and ferroelectric thin films

12:15 PM–12:51 PM

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  Yi Zheng
    (National University of Singapore)

The unique linear energy band dispersion and its purely 2D crystalline structure have made graphene a rising star not only for fundamental research but also for nanoscale device applications. Here we demonstrate a novel non-volatile memory device using a combination of graphene and a ferroelectric thin film. The binary information, i.e. ``1'' and ``0'', is represented by the high and low resistance states of the graphene working channels and is switched by the polarization directions of the ferroelectric thin film. A highly reproducible resistance change exceeding 300\% is achieved in our graphene-ferroelectric hybrid devices under ambient conditions. The experimental observations are explained by the electrostatic doping of graphene by the remnant electrical field at the ferroelectric/graphene interface.

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