Session Z32: Focus Session: Magnetoresistance and Spin-dependent Transport

11:15 AM–1:51 PM, Friday, March 20, 2009
Room: 336

Sponsoring Units: GMAG DMP FIAP
Chair: Kiran Thadani, Cornell University

Abstract ID: BAPS.2009.MAR.Z32.13

Abstract: Z32.00013 : Magnetic tunnel junctions with a ferroelectric barrier using epitaxial La$_{0.7}$Ca$_{0.3}$MnO$_{3}$/(Ba, Sr)TiO$_{3}$/La$_{0.7}$Ca$_{0.3}$MnO$_{3 }$trilayers

1:39 PM–1:51 PM

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Authors:

Shengming Guo
(Pennsylvania State University)

Ke Chen
(Pennsylvania State University)

Xiaoxing Xi
(Pennsylvania State University)

Qi Li
(Pennsylvania State University)

Yonggang Zhao
(Tsinghua University)

We have fabricated multiferroic tunnel junctions using ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_{3 }$as electrodes and ferroelectric (Ba, Sr)TiO$_{3}$ as the barrier. We have observed tunneling magnetoresistance as in a typical magnetic tunnel junction (MTJ). Since the ferroelectric barrier can be charge polarized in two opposite directions which alters tunneling conductance, we have observed large tunneling electroresistance ($\sim$ 50{\%}) when the charge polarization is switched. This has been observed for both magnetic parallel and antiparallel states. As a result, this type of junctions has four resistance states instead of two for a normal MTJ, corresponding to positive- and negative-polarized parallel and antiparallel states. The four states can be manipulated by the magnetic and electric fields. The dependence of the magnetoresistance and electroresistance as functions of magnetic field, electrical field, and bias voltage will be presented.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.Z32.13