Session Z25: Focus Session: Graphene XIX: Electronic Properties
11:15 AM–2:03 PM, Friday, March 20, 2009
Room: 327
Sponsoring Unit:
DMP
Chair: Silvia Viola, Boston University
Abstract ID: BAPS.2009.MAR.Z25.5
Abstract: Z25.00005 : Graphene on Silicon Dioxide: Band gap modulation via substrate surface chemistry
12:03 PM–12:15 PM
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Abstract 
Authors:
Philip Shemella
Saroj K. Nayak
(Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY)
We have studied the electronic structure of graphene deposited on a SiO$_2$ surface using density functional methods. The band structure of the graphene monolayer strongly depends on surface characteristics of the underlying SiO$_2$ surface: for an oxygen-terminated surface, the monolayer exhibits a finite energy band gap while the band gap is closed when the oxygen atoms on the substrate are passivated with hydrogen atoms. We find that at least a graphene bilayer is required for a near zero energy gap when deposited on a substrate without H-passivation. Our results are discussed in the light of recent experiments.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.Z25.5