Session P22: Focus Session: Organic Electronics: FETs II
8:00 AM–10:48 AM, Wednesday, March 12, 2008
Morial Convention Center Room: 214
Sponsoring Units:
DMP DPOLY
Chair: Michael Chabinyc, Palo Alto Research Center
Abstract ID: BAPS.2008.MAR.P22.12
Abstract: P22.00012 : Capacitance-voltage characterization of polythiophene-based field-effect transistors
10:36 AM–10:48 AM
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Abstract
Authors:
Behrang Hamadani
(NIST)
Iain McCulloch
(Imperial College )
Martin Heeney
(Queen Mary University of London)
David Gundlach
(NIST)
We report on frequency-dependent capacitance-voltage characteristics of organic field-effect transistors based on (2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer. The gate voltage and frequency behavior of the devices with the polymer spun on treated and untreated oxide gate dielectric are explored. The high quality of the devices (contact and channel properties) allows the use of traditional CV modeling to accurately describe the electrical characteristics of the intrinsic channel. The findings from this study provide new insight into charge trapping and transport in the field-accumulated channel of organic field-effect devices.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.MAR.P22.12