Session J40: QHE
11:15 AM–2:15 PM, Tuesday, March 6, 2007
Colorado Convention Center Room: 503
Sponsoring Unit:
FIAP
Chair: Mansour Shayegan, Princeton University
Abstract ID: BAPS.2007.MAR.J40.12
Abstract: J40.00012 : Towards Novel Electron and Hole Structures: Characterizing n- and p-Type (110) GaAs/AlAs
1:27 PM–1:39 PM
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Abstract 
Authors:
M. Grayson
S. Dasgupta
S. F. Roth
N. Isik
A. Fontcuberta-i-Morral
M. Bichler
(Walter Schottky Institut, TU Muenchen, Germany)
The (110) facet of GaAs holds promise for new devices because it is the cleave facet, allowing cleaved edge overgrowth [1] and corner overgrowth structures [2], and because recent work demonstrates that Si can also function as an acceptor for high mobility p-type structures [3]. We present characterizations of p-doped GaAs on (110) wafers and cleave facets, which show an interesting spin-orbit coupling effect, resulting in a spin-index anticrossing in the lowest Landau level. n-doped AlAs on the same (110) facet shows a strong anisotropy, suggesting that only a single anisotropic-mass valley is occupied. Initial attempts at combining n- and p-type doped structures in coplanar 2D systems will be presented. [1] M. Grayson, APL 87, 212113 (2005); [2] M. Grayson, APL 86, 032101 (2005); [3] F. Fischer, APL 86, 192106 (2005).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2007.MAR.J40.12