Bulletin of the American Physical Society
2006 APS March Meeting
Monday–Friday, March 13–17, 2006; Baltimore, MD
Session K46: Spectroscopy of Semiconductors
2:30 PM–5:06 PM,
Tuesday, March 14, 2006
Baltimore Convention Center Room: 349
Sponsoring Unit: FIAP
Chair: Giti Khodaparast, Virginia Polytechnic Institute and State University
Abstract ID: BAPS.2006.MAR.K46.13
Abstract: K46.00013 : Analysis of Reflectivity Measurements*
4:54 PM–5:06 PM
Preview Abstract Abstract
(Saint Michael's College)
D. Y. Smith
(University of Vermont and Argonne National Laboratory)
Reflectivity measurements over a limited wavelength range do not uniquely determine a material's optical constants. To achieve the latter, reflectivity must be known over a sufficient range to apply phase dispersion analysis, or reflectivity at several angles of incidence must be measured in order to solve Fresnel's equations. An approximate alternative is to fit reflectivity data with a model for the optical constants that is consistent with the material's known, or at least plausible, electronic and/or phonon structure. We have explored this procedure for analysis of IR and visible reflectivity of crystalline, amorphous, and porous silicon using both theoretical and empirical models. Limitations of this procedure, especially at the extremes of the measured range will be discussed.
*Supported by US Department of Energy, Office of Science, Materials Science Division under Contract No. DE-FG02-02ER45964, and Office of Nuclear Physics under contract W-31-109-Eng-38.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.MAR.K46.13
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