Session W16: Semiconductor Applications
2:30 PM–5:18 PM, Thursday, March 16, 2006
Baltimore Convention Center Room: 312
Sponsoring Unit:
FIAP
Chair: James Levine, Kodak
Abstract ID: BAPS.2006.MAR.W16.13
Abstract: W16.00013 : Analysis of microwave-frequency field patterns in an externally-driven Single-Electron Transistor
4:54 PM–5:06 PM
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Abstract 
Authors:
Bryan Hemingway
Andrei Kogan
(University of Cincinnati)
We report a numerical study of electromagnetic field patterns that emerge in a Single-Electron Transistor (SET) device driven by a microwave-frequency signal. In an SET, an electronic droplet (quantum dot) containing a few electrons is connected to two macroscopic conductors via tunnel barriers, and DC current measurements are used to investigate the quantum properties of the lead-dot system. Our goal is to develop a method for a well-controlled excitation of few-electron devices with microwaves. Such capability is needed for investigating the intrinsic time scales of Kondo-correlated electrons, not accessible in static experiments. We study realistic model geometry of an SET defined lithographically on a semiconductor heterostructure such as GaAs/AlGaAs. We find that at frequencies $\sim $ 10 GHz and above, the microwave voltages across the sub-micron features of the SET can be drastically different from those applied to the large-scale pads and depend in a complex and sensitive way on the excitation frequency, thus presenting a challenge for dynamic transport experiments with SETs. We discuss possible strategies for resolving the problem.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.MAR.W16.13