Session W16: Semiconductor Applications
2:30 PM–5:18 PM, Thursday, March 16, 2006
Baltimore Convention Center Room: 312
Sponsoring Unit:
FIAP
Chair: James Levine, Kodak
Abstract ID: BAPS.2006.MAR.W16.3
Abstract: W16.00003 : Single-Mode Distributed-Feedback ``W'' Diode and Interband Cascade Lasers in the Mid-Infrared
2:54 PM–3:06 PM
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Abstract 
Authors:
Chul Soo Kim
Mijin Kim
Chadwick Canedy
William Bewley
James Lindle
Igor Vurgaftman
Jerry Meyer
(Code 5613, Naval Research Laboratory, Washington DC 20375)
To obtain spectrally pure output, we have fabricated narrow index--guided ridges with lateral distributed-feedback (DFB) line gratings on both ``W'' diode and interband cascade lasers. The ``W'' diode structure containing a GaSb $p$-SCH etch-stop layer was chemically etched into a 5 $\mu $m ridge and a first-order DFB grating constructed on both side walls of the ridge. For the interband cascade laser, a first-order top DFB grating was patterned on top of a chemically-etched ridge that was 15 $\mu $m wide. The low-loss DFB mode was roughly resonant with the gain peak at $T$ = 165 K for the ``W'' diode and at $T$ = 110 K for the interband cascade laser. The sidemode suppression ratios were definitely $>$ 20 dB for both devices, and all of the features above 30 dB appeared to result from instrument noise rather than actual parasitic modes. Just beyond the stop band on the long-wavelength side of the ``W'' diode DFB, a series of longitudinal modes became apparent at $>$ 30 dB suppression. For the narrow-ridge waveguide DFB devices, the temperature ranges over which single-mode lasing were successfully obtained were 140-162 K for the ``W'' diode, for which $\lambda $ = 3.195 $\sim $ 3.202 $\mu $m (0.29 nm/K), and 110-125 K for the interband cascade laser, for which $\lambda $ = 3.452 $\sim $ 3.456 $\mu $m (0.27 nm/K).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.MAR.W16.3