Session N19: Semiconductor Spin Transport
8:00 AM–11:00 AM, Wednesday, March 15, 2006
Baltimore Convention Center Room: 316
Sponsoring Units:
GMAG DMP
Chair: Jim Chelikowsky, University of Texas
Abstract ID: BAPS.2006.MAR.N19.1
Abstract: N19.00001 : High field magnetoresistance in $p$-(In,Mn)As/$n$-InAs heterojunctions
8:00 AM–8:12 AM
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Authors:
Bruce Wessels
Steven May
(Materials Science and Engineering, Northwestern University)
The high field magnetoresistive properties of a $p$-In$_{0.96}$Mn$_{0.04}$As/$n$-InAs junction have been measured. The heterojunctions were formed by epitaxially depositing an InMnAs thin film on an InAs substrate using metal-organic vapor phase epitaxy. Under forward bias, a large, nonsaturating magnetoresistance is observed at temperatures from 25 to 295 K in fields up to 9 T. At room temperature, the magnetoresistance increases linearly with magnetic field from 1.5 to 9 T and is greater than 700 {\%} at 9 T. The magnetoresistance can be simulated using a modified diode equation, including a field-dependent series magnetoresistance.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.MAR.N19.1