Bulletin of the American Physical Society
2005 APS March Meeting
Monday–Friday, March 21–25, 2005; Los Angeles, CA
Session A18: Focus Session: Semiconductor Characterization
8:00 AM–11:00 AM,
Monday, March 21, 2005
LACC
Room: 406A
Sponsoring
Units:
FIAP GIMS
Chair: David Seiler, NIST
Abstract ID: BAPS.2005.MAR.A18.11
Abstract: A18.00011 : Structural and morphological characterization of GaN(0001) layers grown on SiC by maskless pendeo-epitaxy via X-ray Microdiffraction
10:24 AM–10:36 AM
Preview Abstract Abstract
Authors:
R.I. Barabash
G.E. Ice
(Oak Ridge National Laboratory)
S. Einfeldt
D. Hommel
(University of Bremen)
A.M. Roskovski
R.F. Davis
(North Carolina State University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2005.MAR.A18.11
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