Bulletin of the American Physical Society
73rd Annual Gaseous Electronics Virtual Conference
Volume 65, Number 10
Monday–Friday, October 5–9, 2020; Time Zone: Central Daylight Time, USA.
Session DM2: Workshop IV: Plasma Enhanced Atomic Layer Etch/Atomic Layer DepositionLive
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Chair: Sebastian Engelmann, IBM Research |
Monday, October 5, 2020 12:45PM - 1:00PM Live |
DM2.00001: Plasma Enhanced Atomic Layer Etch/Atomic Layer Deposition Invited Speaker: Sebastian Engelmann Novel thin films, thin film laminates and alloys promising unprecedented performance are growing the need for the ultimate process solution: deposition and etch with atomic layer precision. Atomic Layer Deposition has been developed for a while and is a critical element in manufacturing. Atomic layer etching is a promising path to answer the processing demands of new devices at the Angstrom scale. Self-limiting reactions, discrete reaction and activation steps are some of the pathways being pursued for precise material removal control and maintaining the original film performance. Both etch and deposition processes share similar approaches and understanding of the reaction chemistry paths is essential. A look at thermal ALE/ALD processes may enable a deeper understanding of processes in plasma based approaches. In this workshop we seek to explore how much of these complex processes we understand enough so they can be modelled/simulated and eventually used for process optimization. [Preview Abstract] |
Monday, October 5, 2020 1:00PM - 1:45PM Live |
DM2.00002: Plasma chemistry data and chemistry set optimisation approach for ALD/ALE modeling Anna Dzarasova, Martin Hanicinec, Sebastian Mohr, Jonathan Tennyson Modern ALD and ALE processes are often enhanced with a plasma-assisted step allowing for gentler conditions on the surface and offering a greater variety in terms of active species in the gas phase than conventional chemical etch and deposition. However, using plasma means adding a large number of process parameters which will impact the outcome. In order to mitigate R&D risks and optimise the process conditions with regards to the production of suitable reactive species, plasma modelling can be employed. This, in turn, requires to have a thorough understanding of the plasma chemistry and the choice of species and reactions in the chemistry set used for modelling. In this presentation, we will show results of a sensitivity analysis of plasma chemistry sets for frequently used gas-mixtures such as O2, SF6, N2/H2 vs NH3 to identify key species and reactions. Furthermore, we will propose steps of assembling a plasma chemistry set from scratch and checking its self-consistency using www.quantemolDB.com. [Preview Abstract] |
Monday, October 5, 2020 1:45PM - 2:30PM Live |
DM2.00003: Atomic Layer Etching of Metals with Anisotropy, Specificity and Selectivity Jane Chang, Yantao Xia, Philippe Sautet, Xia Sang This talk addresses key challenges in atomic layer etching (ALE) of metals, a relatively new field that is expected to grow rapidly given the major advancements potentially enabled via metal incorporation throughout the manufacturing process of integrated circuits. To realize atomic precision in removing etch-resistant materials with complex compositions or structures, the surface reactivity replaces etch rate as the parameter of interest to control the chemical contrast needed for selectivity. The desirable etching anisotropy dictates the usage of directional ions. A find control of the ion energy and neutral-to-ion ratio could be the gateway of reactivity control, which is demonstrated with recent progress on thermal-plasma ALE of various metals, including Ni, Co, and Cu. The effect of surface reactivity is studied from first principle atomistic calculations and confirms the experimental findings. [Preview Abstract] |
Monday, October 5, 2020 2:30PM - 3:15PM Live |
DM2.00004: Reaction Network Analysis for Atomic Layer Deposition Processes Invited Speaker: Raymond Adomaitis Modeling the dynamics of atomic layer deposition processes is challenging because of the nonlinear behavior of these systems, their multiple and widely-ranging timescales, and by the relative lack of validated reaction kinetics information. Those data that do exist are typically derived from quantum chemical computations or experimental examinations of reaction sequences that define only a portion of the complete ALD reaction cycle. In this talk, I will describe our efforts to develop mathematical methods that address the numerical challenge of simulating dynamic ALD processes while providing a rational path to creating well-posed models of these deposition processes. Our model reduction approach is based on a two-step procedure where in the first step, the chemical species surface balance dynamic equations are factored to decouple the (nonlinear) reaction rates, eliminating redundant dynamic modes. The second phase further reduces the dynamic dimension when species relatively minor in concentration can be identified. The overall technique extracts physically significant reaction invariants and points to potential model structural problems if they exist. [Preview Abstract] |
Monday, October 5, 2020 3:15PM - 4:00PM Live |
DM2.00005: Selective Etching Promoted by the Area Selective Growth of Deactivating Polymers. Rudy Wojtecki As the semiconductor community continues scaling, area selective depositions (ASD) offer the potential to relax down-stream processing steps with self-aligned strategies. Directing a polymerization in an area selective manner offers an ASD process where the deposited film is a porous carbon rich material. This was achieved with the synthesis of polymer initiators that selectively adhere to the metal portion of pre-patterned surface, composed of copper and silicon features. With the use of a ruthenium catalyst (Grubbs generation III) a vapor phase monomer could be introduced to an initiator functionalized surface and polynorbornene grown selectively from the copper features. The resulting polymer films act as an effective inhibitor for the atomic layer deposition of ZnO, where up to 40nm could be selectively deposited on silicon features. While the polymer did not function as an effective inhibitor for TiO$_{\mathrm{2}}$ ALD, the deposition on the polymer dramatically altered the etching characteristics of the film. This property could be exploited to achieve the area selective etching of metal features despite a non-selective ALD process. This is the first demonstration of an area selective polymerization to enable ASD and selective etch at both micro- and nanoscale features. [Preview Abstract] |
Monday, October 5, 2020 4:00PM - 4:30PM Live |
DM2.00006: Discussion (4:00pm - 4:30pm) Abstract APS Discussion (4:00pm - 4:30pm) [Preview Abstract] |
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