Bulletin of the American Physical Society
71st Annual Gaseous Electronics Conference
Volume 63, Number 10
Monday–Friday, November 5–9, 2018; Portland, Oregon
Session DT3: Plasma-Surface Interactions I (Etching) |
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Chair: Jane P. Chang, University of California, Los Angeles Room: Oregon Convention Center A106 |
Tuesday, November 6, 2018 8:00AM - 8:30AM |
DT3.00001: Surface reaction control of plasma etch for atomic level accuracy in ULSI devices fabrication Invited Speaker: Masaru Izawa The structures of LSI devices are becoming increasingly three-dimensional and the process flows are becoming more complex to increase circuit density, e.g. adoption of design-technology of co-optimization (DTCO), and gate-all-around (GAA) transistors. In plasma etching processes of the future LSI device fabrication, not only the profile control with atomic-level accuracy, but also conformal etching of a high aspect pattern are required, To meet these requirements, Atomic Layer Etching (ALE) technologies have been investigated. In the ALE, each surface reactions, adsorption, protection, and desorption are controlled separately and accurately to improve etch profile and selectivity. We have investigated a cyclic ALE of a microwave ECR plasma etching tool based on the triple time modulation (Tri-TM) technology which is a combination of plasma, RF, and gas pulsing modulation. The Tri-TM has been applied to high selective various thin films etching, e.g. Si, SiN, HfO. We have also investigated rapid thermal cyclic ALE technology by using IR lamp and plasma source for accurate conformal etching. High selective SiN, TiN, and W conformal etching have been achieved. Etching mechanism, modification layer formation and desorption were investigated in the both etching technologies. [Preview Abstract] |
Tuesday, November 6, 2018 8:30AM - 8:45AM |
DT3.00002: Dynamics of surface ripple formation and propagation during plasma etching Kouichi Ono Nanoscale surface roughening and ripple formation in response to ion incidence angle has attracted much attention during plasma etching, from the viewpoint of self-organized formation of ordered surface nanostructures as well as suppression of roughness on feature surfaces in the fabrication of nanoscale devices. We have investigated numerically and experimentally the surface morphology evolution during silicon etching in chlorine-based plasmas [1], and demonstrated the formation of well-defined periodic sawtooth-like ripple structures using sheath control plates to achieve the off-normal ion incidence onto substrate surfaces [2]. In this work, we study the atomistic mechanisms for the formation of sawtooth-like ripples and their lateral propagation across the surfaces being etched, based on Monte Carlo simulations of plasma-surface interactions and feature profile evolution, which are compared with experiments with the help of classical molecular dynamics simulations. Emphasis is placed on the crucial role and effects of ion reflection from microstructural feature surfaces on incidence during etching. $^{\mathrm{1\thinspace }}$K. Ono \textit{et al}., J. Phys. D: Appl. Phys. \textbf{50}, 414001 (2017). $^{\mathrm{2\thinspace }}$N. Nakazaki \textit{et al}., AIP Adv. \textbf{8}, 055027 (2018). [Preview Abstract] |
Tuesday, November 6, 2018 8:45AM - 9:00AM |
DT3.00003: Plasma Parameters in an Ar and Ar/Cl$_{\mathrm{2\thinspace }}$Asymmetric Coaxial CCP Used for Plasma Etching of Superconducting Niobium Cavities. Jeremy Peshl, Milka Nikolic, Alex Godunov, Svetozar Popovic, Lepsha Vuskovic Plasma parameters of both Ar and Ar/Cl$_{\mathrm{2\thinspace }}$plasmas were evaluated using Optical Emission Spectroscopy techniques. Emission spectra from the 3p$^{\mathrm{5}}$4p levels of Ar are analyzed within two different line ratio methods to extract the pertinent information. The analysis of a pure Ar plasma serves to establish the methodology and provides a reference for the Ar/Cl$_{\mathrm{2\thinspace }}$plasma.$_{\mathrm{\thinspace }}$The first line ratio technique follows a previously published method utilizing the photon escape factor of specific transitions to calculate the densities of the resonant and metastable levels. This technique is advantageous because it requires no knowledge of the distribution \textit{a priori. }The population densities of the resonant and metastable levels, along with the escape factors for each transition, were used in a line ratio technique utilizing a Collisional Radiative Model. Two sets of cross sections were employed in the analysis: calculated direct excitation cross sections and experimental cross sections containing cascade effects. Four different electron energy distributions were applied to the analysis for comparison. A comprehensive analysis was conducted over a wide array of experimental parameters relevant to plasma etching of Niobium. [Preview Abstract] |
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