Bulletin of the American Physical Society
69th Annual Gaseous Electronics Conference
Volume 61, Number 9
Monday–Friday, October 10–14, 2016; Bochum, Germany
Session TR2: Magnetrons II |
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Chair: Jon Gudmundsson, University of Iceland Room: 2a |
Thursday, October 13, 2016 4:00PM - 4:15PM |
TR2.00001: Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges Jan Trieschmann, Dennis Krueger, Frederik Schmidt, Ralf Peter Brinkmann, Thomas Mussenbrock Magnetron sputtering typically operated at low pressures below 1~Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter [1,2], giving rise to low, mid, and high energy groups of ions observed at the substrate [2]. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified.\newline [1] A.\ Anders et al., Appl.\ Phys.\ Lett.\ 103, 144103 (2013)\newline [2] C.\ Maszl et al., J.\ Phys.\ D:\ Appl.\ Phys.\ 47, 224002 (2014) [Preview Abstract] |
Thursday, October 13, 2016 4:15PM - 4:30PM |
TR2.00002: Global model for active control of capacitive radio frequency magnetron discharges Dennis Engel, Dennis Krueger, Christian Woelfel, Moritz Oberberg, Jan Lunze, Peter Awakowicz, Ralf Peter Brinkmann Sputtering technologies have a widespread of applications in modern industries. Up to now, no appropriate model is available for active control of these processes. Controlling inhibits the drift of process parameters and therefore helps to improve the quality of deposited thin films. The aim of this work is to develop a global model for radio frequency capacitively coupled plasma (RF-CCP) magnetron discharges. Several global models for RF-CCPs have been proposed [1], but most of them neglect the existence of a magnetic field inside the plasma. This work builds on existing models but takes into account the underlying magnetic field. Therefore a lumped circuit model with its corresponding system of differential equations is formulated and the influence of the magnetic field is analysed. The proposed model is used to investigate several parameters such as neutral gas pressure, magnetic field strength or applied voltage, to be able to actively control thin film growth.\\[1ex] [1] T. Mussenbrock et al., PSST \textbf{16}, 377–385 (2007) [Preview Abstract] |
Thursday, October 13, 2016 4:30PM - 4:45PM |
TR2.00003: Electron dynamics in magnetized technological plasmas: A kinetic description Ralf Peter Brinkmann, Dennis Krueger Many advanced thin-film deposition processes like HIPIMS (High Power Impulse Magnetron Sputtering) or PIAD (Plasma-Ion Aided Deposition) employ magnetized plasmas at a pressure range of 0.1 to 1 Pa and a magnetic field of 10 to 100 mT. In such plasmas, the electron gyration radius $r_{\rm L}$ is of the order of a millimeter, whereas the mean free path $\lambda$ is much larger, typically comparable with the plasma source dimension $L$ itself (some tens to hundreds of millimeters). It is generally acknowledged that in this regime fluid dynamics fails and a kinetic approach is required. This work employs the smallness of the parameter epsilon $r_{\rm L}/\lambda \sim r_{\rm L}/L$ to reduce the complexity of that approach to a tractable level. As an application, the phenomenon of spoke formation in HIPIMS discharges is addressed. [Preview Abstract] |
Thursday, October 13, 2016 4:45PM - 5:00PM |
TR2.00004: Modeling of RF Magnetron Plasma in N$_{\mathrm{2}}$ with dielectric target Steven Arbeltier, Adrien Revel, Frédéric Sabary, Christophe Secouard, Tiberiu Minea Thin film batteries technology requires a solid electrolyte suitable for its operation. One option is to use LiPON deposited from Li$_{\mathrm{3}}$PO$_{\mathrm{4}}$ target by radio frequency magnetron sputtering in nitrogen plasma. Despite the successful implementation of this technology, the processes occurring into the plasma and at the substrate during deposition need to be well understood. Modelling is an interesting approach to study the undergoing phenomena such as the quantification of plasma species, the potential evolution in the reactor, the shape of the racetrack and the trajectories of sputtered species. The present results are obtained from two models, (i) a 0D model which describes the plasma kinetic and (ii) a 2D model assuming the axial symmetry. The latter uses a Particle-In-Cell Monte-Carlo approach and self-consistently describes the plasma creation and charged particles trajectories in the reactor. The geometry and the magnetic field correspond to a real CEA-LETI reactor .The dielectric target is 6'' diameter. Radiofrequency polarization of the target is taken into account in the model. Results on the evolution of ions density in plasma, the electric-field and the self-bias on the target, are discussed. [Preview Abstract] |
Thursday, October 13, 2016 5:00PM - 5:15PM |
TR2.00005: Reactive high power impulse magnetron sputtering: combining simulation and experiment Tomas Kozak, Jaroslav Vlcek Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO$_2$, ZrO$_2$, Ta$_2$O$_5$, HfO$_2$, VO$_2$. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates. [Preview Abstract] |
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