Bulletin of the American Physical Society
69th Annual Gaseous Electronics Conference
Volume 61, Number 9
Monday–Friday, October 10–14, 2016; Bochum, Germany
Session RR2: Plasma Deposition II |
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Chair: Doug Kell, Lam Research Corporation Room: 2a |
Thursday, October 13, 2016 11:00AM - 11:15AM |
RR2.00001: Selective deposition for "chamber clean-free" processes using tailored voltage waveform plasmas Junkang Wang, Erik V. Johnson Tailored Voltage Waveforms (TVWs) have been proven capable of creating plasma asymmetries in otherwise symmetric CCP reactors. Particularly, sawtooth TVWs (described as having strong slope-asymmetry due to different voltage rise/fall slope) can lead to different sheath dynamics, thus generating strongly asymmetric ionization near each electrode. To date, research concerning the slope-asymmetry has only focused on single-gas plasmas. Herein, we present a study looking at SiF$_{\mathrm{4}}$/H$_{\mathrm{2}}$/Ar mixtures to investigate silicon thin film deposition. The resulting surface process depends strongly on multiple precursors, and the deposition requires a specific balance between surface arrival rates of SiF$_{\mathrm{x}}$ and H. For a certain gas flow ratio, we can obtain a deposition rate of 0.82{\AA}/s on one electrode and an etching rate of 1.2{\AA}/s on the other. Moreover, the deposition/etching balance can be controlled by H$_{\mathrm{2}}$ flow and waveform amplitude. This is uniquely possible due to the mixed-gas nature of the process and localized ionization generated by sawtooth TVWs. This encourages the prospect that one could choose process conditions to achieve a variety of desired depositions on one electrode, while leaving the other pristine. [Preview Abstract] |
Thursday, October 13, 2016 11:15AM - 11:30AM |
RR2.00002: Thin film deposition using rarefied gas jet Dr. Sahadev Pradhan The rarefied gas jet of aluminium is studied at Mach number \textit{Ma }$=$\textit{ (U\textunderscore j / }$\backslash $\textit{sqrt\textbraceleft kb T\textunderscore j / m\textbraceright )}in the range \textit{.01 \textless Ma \textless 2}, and Knudsen number \textit{Kn }$=$\textit{ (1 / (}$\backslash $\textit{sqrt\textbraceleft 2\textbraceright }$\backslash $\textit{pi d\textasciicircum 2 n\textunderscore d H)} in the range \textit{.01 \textless Kn \textless 15}, using two-dimensional (2D) direct simulation Monte Carlo (DSMC) simulations, to understand the flow phenomena and deposition mechanisms in a physical vapor deposition (PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, $H$is the characteristic dimension, \textit{U\textunderscore j}and \textit{T\textunderscore j}are the jet velocity and temperature, \textit{n\textunderscore d}is the number density of the jet, $m$and $d$ are the molecular mass and diameter, and \textit{kb}is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number \textit{((Kn }$=$\textit{ 0.01);}shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number$,$which allows scattering collisions to rapidly direct the atoms to the substrate. [Preview Abstract] |
Thursday, October 13, 2016 11:30AM - 11:45AM |
RR2.00003: Effects of Various RF Powers on CdTe Thin Film Growth Using RF Magnetron Sputtering Mohammad Alibakhshi, Zohreh Ghorannevis Cadmium telluride (CdTe) film was deposited using the magnetron sputtering system onto a glass substrate at various deposition times and radio frequency (RF) powers. Ar gas was used to generate plasma to sputter the CdTe atoms from CdTe target. Effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD) analysis showed that the films exhibited polycrystalline nature of CdTe structure with the (111) orientation as the most prominent peak. Optimum condition to grow the CdTe film was obtained and it was found that increasing the deposition time and RF power increases the crystallinity of the films. From the profilometer and XRD data's, the thicknesses and crystal sizes of the CdTe films increased at the higher RF power and the longer deposition time, which results in affecting the band gap as well. From atomic force microscopy (AFM) analysis we found that roughnesses of the films depend on the deposition time and is independent of the RF power. [Preview Abstract] |
Thursday, October 13, 2016 11:45AM - 12:00PM |
RR2.00004: Plasma Assisted Growth of MoNi Thin Films and Its Physical Characterization Zohreh Ghorannevis, Elaheh Akbarnejad, Mahmood Ghoranneviss In this paper effects of a RF power and a deposition time on physical properties of Mo-Ni films were studied systematically. Deposition of Mo-Ni film is performed using RF magnetron sputtering system on soda lime glass. Argon gas is used to sputter the atoms of Mo and Ni from Mo-Ni target. Structural, morphological, optical and electrical properties of the films are studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), spectrophotometer and four point probe, respectively. We found that by increasing the RF power, structure of the film can change from Mo to Mo-Ni, which is due to the higher sputtering yield of the Ni at higher RF powers. On the other hand, changing the deposition time also affected the physical properties of the Mo-Ni films. By increasing the deposition time crystalline structure significantly improved and the resistivity of the films decreased as a result of higher content of the Ni atoms amount. [Preview Abstract] |
Thursday, October 13, 2016 12:00PM - 12:15PM |
RR2.00005: Atmospheric inductively coupled Ar/H$_{\mathrm{2}}$ plasma torch for spraying B$_{\mathrm{4}}$C/Cu functionally gradient material Peng Zhao, Lin Li, Qijia Guo, Guohua Ni, Xiaodong Zhang For preparing plasma facing material (PFM) in fusion device, an Ar/H$_{\mathrm{2}}$ inductively coupled plasma torch driven by a 24-60 MHz RF power is developed for spraying B$_{\mathrm{4}}$C/Cu functionally gradient material (FGM). In previous studies, we found that by adding a fractional amount of H$_{\mathrm{2}}$ gas into Ar plasma, quality of B$_{\mathrm{4}}$C/Cu coating was significantly improved. To discuss the effect of ingredient and the flow rate of plasma gas and frequency of the RF power on plasma characteristics, the optical emission spectroscopy (OES) measurement was performed. The gas rotational temperature is determined by simulating experimental hydroxyl spectra. The excitation temperature is estimated by the ratio of the intensities of the spectral lines of Ar I based on Boltzmann's method. The effects on B$_{\mathrm{4}}$C/Cu coating quality were studied by means of X-ray photoelectron spectrometry (XPS), scanning electron microscope (SEM) and energy dispersive spectrometer (EDS). All the plasma properties and the results of B$_{\mathrm{4}}$C/Cu coating would give us an insight on the mechanism and the possibility of improving the process. [Preview Abstract] |
Thursday, October 13, 2016 12:15PM - 12:30PM |
RR2.00006: Modelling the plasma plume of an assist source in PIAD Jochen Wauer, Jens Harhausen, R\"udiger Foest, Detlef Loffhagen Plasma ion assisted deposition (PIAD) is a technique commonly used to produce high-precision optical interference coatings. Knowledge regarding plasma properties is most often limited to dedicated scenarios without film deposition $[1]$. Approaches have been made to gather information on the process plasma in situ $[2]$ to detect drifts which are suspected to cause limits in repeatability of resulting layer properties. Present efforts focus on radiance monitoring of the plasma plume of an Advanced Plasma Source (APSpro, B\"uhler) by optical emission spectroscopy to provide the basis for an advanced plasma control. In this contribution modelling results of the plume region are presented to interpret these experimental data. In the framework of the collisional radiative model used [3], 15 excited neutral argon states in the plasma are considered. Results of the species densities show good consistency with the measured optical emission of various argon $2p - 1s$ transitions.\\ This work was funded by BMBF under grant 13N13213.\\ $[1]$ Harhausen et al., {\it Plasma Sources Sci. Technol.} {\bf21} (2012) 035012\\ $[2]$ Styrnoll et al., {\it Plasma Sources Sci. Technol.} {\bf22} (2013) 045008\\ $[3]$ Harhausen et al., {\it J. Phys. D: Appl. Phys.} {\bf48} (2015) 045203 [Preview Abstract] |
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