Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session TF2: Plasma Etching II
10:00 AM–12:15 PM,
Friday, October 16, 2015
Room: 308 AB
Chair: Demetre Economou, University of Houston
Abstract ID: BAPS.2015.GEC.TF2.8
Abstract: TF2.00008 : Dry Etching of Si$_{3}$N$_{4}$, SiO$_{2}$ and Si Using Remote Plasma Sources Sustained in NF$_{3}$ Mixtures*
12:00 PM–12:15 PM
Preview Abstract Abstract
Authors:
Shuo Huang
(U. Michigan)
Vladimir Volynets
(Samsung Electronics Ltd.)
Sangheon Lee
(Samsung Electronics Ltd.)
In-Cheol Song
(Samsung Electronics Ltd.)
Siqing Lu
(Samsung Electronics Ltd.)
James Hamilton
(U. College London)
Jonathan Tennyson
(U. College London)
Mark J. Kushner
(U. Michigan)
*Work supported by Samsung Electronics, SRC and NSF.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.TF2.8
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