Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session TF2: Plasma Etching II
10:00 AM–12:15 PM,
Friday, October 16, 2015
Room: 308 AB
Chair: Demetre Economou, University of Houston
Abstract ID: BAPS.2015.GEC.TF2.5
Abstract: TF2.00005 : Cryogenic etching of Si with SF$_{6}$/O$_{2}$: a modeling and experimental study
11:15 AM–11:30 AM
Preview Abstract Abstract
Authors:
Stefan Tinck
(University of Antwerp)
Erik C. Neyts
(University of Antwerp)
Thomas Tillocher
(University of Orleans)
Remi Dussart
(University of Orleans)
Annemie Bogaerts
(University of Antwerp)
Collaborations:
Plasmant, GREMI
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.TF2.5
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