Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session SF2: Carbon Related Materials Deposition |
Hide Abstracts |
Chair: Jyh-Ming Ting, National Cheng Kung University Room: 308 AB |
Friday, October 16, 2015 8:00AM - 8:15AM |
SF2.00001: Effects of Fluorine Termination of Carbon Nanowall Edges on Their Electrical Properties by Ar/NO/F$_{2}$ Mixture Gas Treatments Hyung Jun Cho, Satomi Tajima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, Masaru Hori Carbon nanowalls (CNWs) are one of graphene materials. They consist of multiple graphene sheets grown vertically on the substrate and form a maze-like wall structures. Therefore, a chemical termination of high-density graphene edges on the top regions is essential to control their unique properties. In this study, irradiation effects of fluorine (F) atoms generated using Ar/NO/F$_{2}$ gas mixture on changes in chemical bonding structure, crystallinity, and electrical properties of the CNWs, fabricated by a radical injection-plasma enhanced CVD (RI-PECVD) system, were investigated. In the Raman spectra, decrease in relative intensity of D-band peak was found after the Ar/NO/F$_{2}$ treatment, which indicates crystallinity improvement of CNWs. According to XPS, F incorporation into the CNWs and formation of related C-F bonds obviously occurred. As the exposure temperature increased, both the F contents in the CNWs and crystallinity improvements were enhanced. Furthermore, the higher electrical conductivities were obtained after the Ar/NO/F$_{2}$ gas treatment at a higher temperature. We demonstrated that the electrical properties could be controlled by the F termination of the graphene edges without degradation of the crystallinity. [Preview Abstract] |
Friday, October 16, 2015 8:15AM - 8:30AM |
SF2.00002: Colorful carbon nanopopcorns formed by plasma CVD of diamond-like carbon from CH4 and co-deposited C60 followed by reaction with water vapor Toshihiro Shimada, Wei Xie, Takuya Miura, Takashi Yanase, Taro Nagahama We report the synthesis of a new carbon material - diamond-like carbon (DLC) film co-deposited with 1 {\%} C60 molecules - by plasma CVD. The synthesized films exhibited strong iridescence colors after being exposed to an atmosphere containing water vapor, whereas they were transparent just after the deposition. The refractive index of the iridescent films was as high as 3.6 at 650 nm. An electron microscopy examination revealed that the film expanded by more than twice while forming 10 - 100 nm sized grain-like structures after its exposure to water vapor. The reaction has been examined experimentally and theoretically: FTIR after exposure to D2O reveals that OH are connected with carbon. Raman spectra were only slightly different from transparent DLC without C60. Quantum chemical calculation revealed that the C60 conected with other carbons in DLC networks can react with water to make OH bonds. It is associated with cage-breaking of C60, which will initiate the deformation of DLC network. This work demonstrates a new concept of incorporating reaction centers in carbon solids by plasma CVD to make carbon-based nanostructures. [Preview Abstract] |
Friday, October 16, 2015 8:30AM - 8:45AM |
SF2.00003: Fabrication of Nanoplatform Based on Vertical Nanographene Mineo Hiramatsu, Masakazu Tomatsu, Hiroki Kondo, Masaru Hori Nanoplatform based on vertical nanographene with large surface area offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing, biosensing and energy conversion applications. Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate, forming a self-supported network of maze-like wall structures. Their morphologies depend on source gases, pressure, process temperature as well as the type of plasma used for the growth. In view of practical use of CNWs for device applications such as biosensors in the form of micro-total analysis system, the structure of CNWs should be controlled in the nucleation and growth stages. Furthermore, post processes including etching and surface functionalization should also be established. In this study, CNWs were synthesized by PECVD methods using ICP and CCP with radical injection employing methane/hydrogen system. We investigated systematically the early growth stage of CNWs to control their structures for the fabrication of nanoplatform based on vertical nanographene. We report the current status of the control of CNW structures by nucleation control as well as post treatment, together with examples of electrochemical applications using CNWs. [Preview Abstract] |
Friday, October 16, 2015 8:45AM - 9:00AM |
SF2.00004: Effect of atomic composition on hardness of Si-containing a-C:H films deposited by ultra-high-speed PECVD at over 100 micron/h Hiroyuki Kousaka, Yasuyuki Takaoka, Noritsugu Umehara Plasma CVD is often employed for depositing DLC (Diamond-Like Carbon) due to its excellent capability for coating 3-dimensional shapes; however, its coating speed is typically not so high, $\sim$ 1 $\mu $m/h due to the use of low-density DC or RF plasmas. We have proposed an ultra-high-speed DLC coating at over 100 $\mu $m/h where much higher-density plasma is sustained by microwave propagation along plasma-sheath interface. In this work, Si-containing a-C:H films (one type of DLC) were deposited on steel substrates by different 2 methods: DC plasma and microwave-excited high-density near plasma, or our newly proposed method, where the gas composition of Ar, CH$_{4}$, C$_{2}$H$_{2}$, and TMS, and the duty ratio of microwave and substrate bias were changed at a fixed substrate bias of $-$500 V. For example, under the same condition except microwave injection, the deposition rate and hardness of the DLC deposited by DC plasma were 2.5 $\mu $m/h and 11.8 GPa, respectively; while the deposition rate and hardness of the DLC deposited by microwave-excited high-density near plasma were 156 $\mu $m/h and 20.8 GPa, respectively. The atomic composition of the films was evaluated by XPS for C, O, and Si, and RBS-ERDA for H/C ratio. [Preview Abstract] |
Friday, October 16, 2015 9:00AM - 9:15AM |
SF2.00005: Single-crystal diamond growth with sub-millisecond-pulsed discharge of microwave plasma Hideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno Single-crystal diamond was homoepitaxially grown by pulse modulated microwave plasma chemical vapor deposition, where pulse-on time was varied into the order of sub-millisecond. Measurements of the optical emission spectra indicate remarkable increase of atomic hydrogen, which is an important radical to maintain the crystal quality. Preliminary growth was conducted and relatively higher growth rate than preceding works was obtained. [Preview Abstract] |
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700