Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session NR2: Plasma CVD/Radical Assisted CVD
8:00 AM–9:30 AM,
Thursday, October 15, 2015
Room: 308 AB
Chair: Kazunori Koga, Kyushu University
Abstract ID: BAPS.2015.GEC.NR2.4
Abstract: NR2.00004 : Development of high-density radical source and its application to high-speed growth of nitride semiconductors by plasma-assisted molecular beam epitaxy
8:45 AM–9:00 AM
Preview Abstract Abstract
Authors:
Hiroki Kondo
(Nagoya University)
Yukinori Kiheida
(NU EcoEngineering Co. Ltd.)
Hiroyuki Kano
(NU EcoEngineering Co. Ltd.)
Yvon Cordier
(CNRS-CRHEA)
Phannara Aing
(Riber Co.)
Olivier Grange
(Riber Co.)
Yuri Tsutsumi
(Nagoya University)
Osamu Oda
(Nagoya University)
Masaru Hori
(Nagoya University)
Hiroshi Amano
(Nagoya University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.NR2.4
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700